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dc.contributor.authorBeton, Peter
dc.contributor.otherThomas, James
dc.contributor.otherBradford, Jonathan
dc.contributor.otherCheng, Tin
dc.contributor.otherSummerfield, Alex
dc.contributor.otherWrigley, James
dc.contributor.otherMellor, Chris
dc.contributor.otherKhlobystov, Andrei
dc.contributor.otherFoxon, Tom
dc.contributor.otherEaves, Laurence
dc.contributor.otherNovikov, Sergei
dc.date.accessioned2020-04-20T09:41:10Z
dc.date.available2020-04-20T09:41:10Z
dc.date.issued2020-04-20
dc.identifier.urihttps://rdmc.nottingham.ac.uk/handle/internal/8300
dc.description.abstractIntegration of graphene and hexagonal boron nitride (hBN) into lateral heterostructures has drawn focus due to the ability to broadly engineer the material properties. Hybrid monolayers with tuneable bandgaps have been reported, while the interface itself possesses unique electronic and magnetic qualities. Herein, we demonstrate lateral heteroepitaxial growth of graphene and hBN by sequential growth using high-temperature molecular beam epitaxy (MBE) on highly ordered pyrolytic graphite (HOPG). We find, using scanning probe microscopy, that graphene growth nucleates at hBN step edges and grows across the surface to form nanoribbons with a controlled width that is highly uniform across the surface. The graphene nanoribbons grow conformally from the armchair edges of hexagonal hBN islands forming multiply connected regions with the growth front alternating from armchair to zigzag in regions nucleated close to the vertices of hexagonal hBN islands. Images with lattice resolution confirm a lateral epitaxial alignment between the hBN and graphene nanoribbons, while the presence of a moiré pattern within the ribbons indicates that some strain relief occurs at the lateral heterojunction. These results demonstrate that high temperature MBE is a viable route towards integrating graphene and hBN in lateral heterostructures.en_UK
dc.language.isoenen_UK
dc.publisherThe University of Nottinghamen_UK
dc.rightsCC-BY*
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/*
dc.subject.lcshGrapheneen_UK
dc.subject.lcshBoron nitrideen_UK
dc.subject.lcshSemiconductorsen_UK
dc.subject.lcshHeterostructuresen_UK
dc.titleStep-flow growth of graphene-boron nitride lateral heterostructures by molecular beam epitaxyen_UK
dc.identifier.doihttp://doi.org/10.17639/nott.7040
dc.subject.freeboron nitride, direct gap semiconductor, ultra-violet, monolayer, heterostructures, grapheneen_UK
dc.subject.jacsPhysical sciencesen_UK
dc.subject.jacsPhysical sciences::Physics::Chemical physics, Solid-state physicsen_UK
dc.subject.lcQ Science::QC Physics::QC170 Atomic physics. Constitution and properties of matteren_UK
uon.divisionUniversity of Nottingham, UK Campus::Faculty of Science::School of Physics and Astronomyen_UK
uon.funder.controlledEngineering & Physical Sciences Research Councilen_UK
uon.datatypeImages acquired using scanning probe microscopyen_UK
uon.grantEP/P019080/1en_UK
uon.collectionmethodMolecular Imaging/Agilent Scanning tunnelling microscope, Asylum Instruments Cypher Atomic Force Microscopeen_UK
uon.rightscontactPeter Betonen_UK
uon.preservation.rarelyaccessedtrue
uon.identifier.risprojectRA27MJen_UK
dc.relation.doihttps://iopscience.iop.org/article/10.1088/2053-1583/ab89e7en_UK


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