Step-flow growth of graphene-boron nitride lateral heterostructures by molecular beam epitaxy
dc.contributor.author | Beton, Peter | |
dc.contributor.other | Thomas, James | |
dc.contributor.other | Bradford, Jonathan | |
dc.contributor.other | Cheng, Tin | |
dc.contributor.other | Summerfield, Alex | |
dc.contributor.other | Wrigley, James | |
dc.contributor.other | Mellor, Chris | |
dc.contributor.other | Khlobystov, Andrei | |
dc.contributor.other | Foxon, Tom | |
dc.contributor.other | Eaves, Laurence | |
dc.contributor.other | Novikov, Sergei | |
dc.date.accessioned | 2020-04-20T09:41:10Z | |
dc.date.available | 2020-04-20T09:41:10Z | |
dc.date.issued | 2020-04-20 | |
dc.identifier.uri | https://rdmc.nottingham.ac.uk/handle/internal/8300 | |
dc.description.abstract | Integration of graphene and hexagonal boron nitride (hBN) into lateral heterostructures has drawn focus due to the ability to broadly engineer the material properties. Hybrid monolayers with tuneable bandgaps have been reported, while the interface itself possesses unique electronic and magnetic qualities. Herein, we demonstrate lateral heteroepitaxial growth of graphene and hBN by sequential growth using high-temperature molecular beam epitaxy (MBE) on highly ordered pyrolytic graphite (HOPG). We find, using scanning probe microscopy, that graphene growth nucleates at hBN step edges and grows across the surface to form nanoribbons with a controlled width that is highly uniform across the surface. The graphene nanoribbons grow conformally from the armchair edges of hexagonal hBN islands forming multiply connected regions with the growth front alternating from armchair to zigzag in regions nucleated close to the vertices of hexagonal hBN islands. Images with lattice resolution confirm a lateral epitaxial alignment between the hBN and graphene nanoribbons, while the presence of a moiré pattern within the ribbons indicates that some strain relief occurs at the lateral heterojunction. These results demonstrate that high temperature MBE is a viable route towards integrating graphene and hBN in lateral heterostructures. | en_UK |
dc.language.iso | en | en_UK |
dc.publisher | The University of Nottingham | en_UK |
dc.rights | CC-BY | * |
dc.rights.uri | https://creativecommons.org/licenses/by/4.0/ | * |
dc.subject.lcsh | Graphene | en_UK |
dc.subject.lcsh | Boron nitride | en_UK |
dc.subject.lcsh | Semiconductors | en_UK |
dc.subject.lcsh | Heterostructures | en_UK |
dc.title | Step-flow growth of graphene-boron nitride lateral heterostructures by molecular beam epitaxy | en_UK |
dc.identifier.doi | http://doi.org/10.17639/nott.7040 | |
dc.subject.free | boron nitride, direct gap semiconductor, ultra-violet, monolayer, heterostructures, graphene | en_UK |
dc.subject.jacs | Physical sciences | en_UK |
dc.subject.jacs | Physical sciences::Physics::Chemical physics, Solid-state physics | en_UK |
dc.subject.lc | Q Science::QC Physics::QC170 Atomic physics. Constitution and properties of matter | en_UK |
uon.division | University of Nottingham, UK Campus::Faculty of Science::School of Physics and Astronomy | en_UK |
uon.funder.controlled | Engineering & Physical Sciences Research Council | en_UK |
uon.datatype | Images acquired using scanning probe microscopy | en_UK |
uon.grant | EP/P019080/1 | en_UK |
uon.collectionmethod | Molecular Imaging/Agilent Scanning tunnelling microscope, Asylum Instruments Cypher Atomic Force Microscope | en_UK |
uon.rightscontact | Peter Beton | en_UK |
uon.preservation.rarelyaccessed | true | |
uon.identifier.risproject | RA27MJ | en_UK |
dc.relation.doi | https://iopscience.iop.org/article/10.1088/2053-1583/ab89e7 | en_UK |
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