Show simple item record

dc.contributor.authorKudrynskyi, Zakhar
dc.contributor.authorPatane, Amaliaen_UK
dc.contributor.otherKerfoot, James
dc.contributor.otherMazumder, Debarati
dc.contributor.otherMakarovsky, Oleg
dc.contributor.otherEaves, Laurence
dc.contributor.otherBeton, Peter
dc.date.accessioned2019-12-20T14:51:32Z
dc.date.available2019-12-20T14:51:32Z
dc.date.issued2020-01-20
dc.identifier.urihttps://rdmc.nottingham.ac.uk/handle/internal/8188
dc.description.abstractTwo-dimensional (2D) van der Waals (vdW) crystals have attracted considerable interest for digital electronics beyond Si-based complementary metal oxide semiconductor technologies. Despite the transformative success of Si-based devices, there are limits to their miniaturization and functionalities. Here we realize resonant tunnelling transistors (RTTs) based on a 2D InSe layer sandwiched between two multi-layered graphene (MLG) electrodes. In these RTTs the energy of the quantum-confined 2D subbands of InSe can be tuned by the thickness of the InSe layer. By applying a voltage across the two MLG electrodes, which serves as the source and drain electrodes to the InSe layer, the chemical potential in the source can be tuned in and out of resonance with a given 2D subband, leading to multiple regions of negative differential conductance (NDC) that can be tuned by electrostatic gating. This work demonstrates the potential of 2D InSe and InSe-based RTTs for applications in quantum electronics.en_UK
dc.language.isoenen_UK
dc.publisherThe University of Nottinghamen_UK
dc.rightsCC-BY*
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/*
dc.subject.lcshField-effect transistorsen_UK
dc.subject.lcshTunneling spectroscopyen_UK
dc.titleResonant tunnelling into the two-dimensional subbands of InSe layersen_UK
dc.identifier.doihttp://doi.org/10.17639/nott.7030
dc.subject.freeInSe, resonant tunnelling, field effect transistors, 2D materials, van der Waals crystalsen_UK
dc.subject.jacsEngineeringen_UK
dc.subject.lcQ Science::QC Physics::QC501 Electricity and magnetismen_UK
dc.subject.lcT Technology::TK Electrical engineering. Electronics Nuclear engineeringen_UK
dc.date.collectionDecember 2018 - July 2019en_UK
uon.divisionUniversity of Nottingham, UK Campus::Faculty of Science::School of Physics and Astronomyen_UK
uon.funder.controlledEngineering & Physical Sciences Research Councilen_UK
uon.datatypeRaw data filesen_UK
uon.funder.freethe European Union’s Horizon 2020 research and innovation programme Graphene Flagship Core 2 under grant agreement number 785219en_UK
uon.funder.freethe Defence Science and Technology Laboratory (Dstl)en_UK
uon.funder.freeThe Leverhulme Trust [RF-2017-224]en_UK
uon.funder.freeThe Royal Society [IE160395]en_UK
uon.grantEP/M012700/1 and EP/N033906/1en_UK
uon.collectionmethodElectrical, optical and atomic force microscopy measurementsen_UK
uon.preservation.rarelyaccessedtrue
dc.relation.doi10.1038/s42005-020-0290-xen_UK


Files in this item

Thumbnail

This item appears in the following Collection(s)

Show simple item record

CC-BY
Except where otherwise noted, this item's license is described as Creative Commons by Attribution