Resonant Zener tunnelling via zero-dimensional states in a narrow gap diode
Di Paola, Davide Maria
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The data contains measured current-voltage characteristics and simulated energy band profiles describing Zener tunnelling via zero-dimensional states in a narrow gap diode. In our devices, a narrow quantum well of the mid-infrared (MIR) alloy In(AsN) is placed in the intrinsic (i) layer of a p-i-n diode. The incorporation of nitrogen in the quantum well creates states that are localized on nanometer lengthscales. These levels provide intermediate states that act as “stepping stones” for electrons tunnelling across the diode and give rise to a negative differential resistance (NDR) that is weakly dependent on temperature.
- Tunneling (Physics)
- Zener diodes
- Zener tunnelling; midinfrared; mid infrared; InAs; InAsN; Zener diode
- Physical sciences::Physics::Nuclear & particle physics
- Q Science::QC Physics::QC170 Atomic physics. Constitution and properties of matter
- University of Nottingham, UK Campus::Faculty of Science::School of Physics and Astronomy
Data typeExperimental current-voltage characteristics as ASCII data. Simulated energy band profiles as ASCII data.
- Funders::Engineering & Physical Sciences Research Council
- EPSRC EP/J015296/1
- Data and simulations collected in 2015 and 2016.
Data collection methodThese are described in the text of the article.