Homoepitaxial Growth of Isotopically Enriched h10BN Layers on h11BN Crystals by High-Temperature Molecular Beam Epitaxy

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Publication date
2025-08-18
Creators
Bradford, Jonathan
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Description
Data files for "Homoepitaxial Growth of Isotopically Enriched h10BN Layers on h11BN Crystals by High-Temperature Molecular Beam Epitaxy"
External URI
DOI
Subjects
  • Boron nitride
  • Isotopes
  • Epitaxy
  • boron nitride, isotope engineering, homoepitaxy
  • Physical sciences::Chemistry::Crystallography
  • Q Science::QD Chemistry::QD901 Crystallography
Divisions
  • University of Nottingham, UK Campus::Faculty of Science::School of Physics and Astronomy
Deposit date
2025-08-18
Data type
Scanning probe microscopy, Raman spectroscopy and secondary ion mass spectrometry
Funders
  • Engineering & Physical Sciences Research Council
Data collection method
Scanning probe microscopy, Raman spectroscopy and secondary ion mass spectrometry
Resource languages
  • en
Publisher
The University of Nottingham
CC-BY
Except where otherwise noted, this item's license is described as Creative Commons by Attribution