Browsing Public Research Data by Subject "boron nitride, direct gap semiconductor, ultra-violet, monolayer, heterostructures, graphene"
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Step-flow growth of graphene-boron nitride lateral heterostructures by molecular beam epitaxy
(The University of Nottingham, 2020-04-20)Integration of graphene and hexagonal boron nitride (hBN) into lateral heterostructures has drawn focus due to the ability to broadly engineer the material properties. Hybrid monolayers with tuneable bandgaps have been ...