Browsing Public Research Data by Author "Makarovsky, Oleg"
Now showing items 1-3 of 3
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Quantum confinement and photoresponsivity of β-In2Se3 nanosheets grown by physical vapour transport
Balakrishnan, Nilanthy; Beton, Peter; Patane, Amalia (University of Nottingham, 2016-06-01)We demonstrate that β-In2Se3 layers with thickness ranging from 2.8 – 100 nm can be grown on SiO2/Si, mica and graphite using a physical vapour transport method. The β-In2Se3 layers are chemically stable at room temperature ... -
Resonant tunnelling into the two-dimensional subbands of InSe layers
Kudrynskyi, Zakhar; Patane, Amalia (The University of Nottingham, 2020-01-20)Two-dimensional (2D) van der Waals (vdW) crystals have attracted considerable interest for digital electronics beyond Si-based complementary metal oxide semiconductor technologies. Despite the transformative success of ... -
Room temperature up-conversion electroluminescence from a mid-infrared In(AsN) tunnelling diode
Di Paola, Davide; Makarovsky, Oleg (applied physics letters, 2020-04-01)Light emitting diodes (LEDs) for the mid-infrared (MIR) spectral range require material systems with tailored optical absorption and emission at wavelengths > 2 μm. Here, we report on MIR LEDs based on In(AsN)/(InAl)As ...