Browsing University of Nottingham Research Data Management Service by Author "Eaves, Laurence"
Now showing items 1-8 of 8
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Direct band-gap crossover in epitaxial monolayer boron nitride
Beton, Peter (The University of Nottingham, 2019-06-28)Hexagonal boron nitride is a large band-gap insulating material which complements the electronic and optical properties of graphene and the transition metal dichalcogenides. However, the intrinsic optical properties of ... -
Giant moiré patterns and lattice-matched epitaxial graphene grown
Summerfield, Alex; Davies, Andrew; Beton, Peter; Diez Albar, Juan; Thomas, James; Cheng, Tin s. (The University of Nottingham, 2018-01-01)Lattice-matched graphene on hexagonal boron nitride is expected to lead to the formation of a band-gap but requires the formation of highly strained material and has not hitherto been realised. We demonstrate that aligned, ... -
A giant quantum Hall plateau in graphene coupled to an InSe van der Waals crystal
Makarovskiy, Oleg (The University of Nottingham, 2017-11-06)Text of the paper submitted to PRL in August 2017, original figure files, raw data, device images, etc. -
Moiré-modulated conductance of hexagonal boron nitride tunnel barriers
Summerfield, Alex (The University of Nottingham, 2018-07-16)Monolayer hexagonal boron nitride (hBN) tunnel barriers investigated using conductive atomic force microscopy reveal moiré patterns in the spatial maps of their tunnel conductance consistent with the formation of a moiré ... -
Quantum confinement and photoresponsivity of β-In2Se3 nanosheets grown by physical vapour transport
Balakrishnan, Nilanthy; Beton, Peter; Patane, Amalia (University of Nottingham, 2016-06-01)We demonstrate that β-In2Se3 layers with thickness ranging from 2.8 – 100 nm can be grown on SiO2/Si, mica and graphite using a physical vapour transport method. The β-In2Se3 layers are chemically stable at room temperature ... -
Resonant tunnelling into the two-dimensional subbands of InSe layers
Kudrynskyi, Zakhar; Patane, Amalia (The University of Nottingham, 2020-01-20)Two-dimensional (2D) van der Waals (vdW) crystals have attracted considerable interest for digital electronics beyond Si-based complementary metal oxide semiconductor technologies. Despite the transformative success of ... -
Step-flow growth of graphene-boron nitride lateral heterostructures by molecular beam epitaxy
Beton, Peter (The University of Nottingham, 2020-04-20)Integration of graphene and hexagonal boron nitride (hBN) into lateral heterostructures has drawn focus due to the ability to broadly engineer the material properties. Hybrid monolayers with tuneable bandgaps have been ... -
Strain-engineered graphene grown on hexagonal boron nitride by molecular beam epitaxy
Beton, Peter; Summerfield, Alex; Davies, Andrew (University of Nottingham, 2016-02-01)Graphene grown by high temperature molecular beam epitaxy on hexagonal boron nitride (hBN) forms continuous domains with dimensions of order 20 μm, and exhibits moiré patterns with large periodicities, up to ~30 nm, ...